Spin-dependent recombination in Czochralski silicon containing oxide precipitates
نویسندگان
چکیده
منابع مشابه
Spin dependent recombination in F&doped silicon p-n junctions
Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (O/ ) at EC 0.23 eV and the donor level ( + 10) at E, ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3675449